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The Semi-Classical Limit of an Optimal Design Problem for the Stationary Quantum Drift-Diffusion Model

机译:静止系统优化设计问题的半经典极限   量子漂移 - 扩散模型

摘要

We consider an optimal semiconductor design problem for the quantum driftdiffusion (QDD) model in the semiclassical limit. The design question isformulated as a PDE constrained optimal control problem, where the dopingprofile acts as control variable. The existence of minimizers for any scaledPlanck constant allows for the investigation of the corresponding sequence.Using the concepts of Gamma-convergence and equi-coercivity we can show theconvergence of minima and minimizers. Due to the lack of uniqueness for thestate system and optimization problem, it was necessary to establish a newresult for the QDD model ensuring the existence of a sequence of quantumsolutions converging to an isolated classical solution. As a by-product, weobtain new insights into the regularizing property of the quantum Bohmpotential. Finally, we present the numerical optimization of a MESFET deviceunderlining our analytical results.
机译:我们考虑半经典极限条件下的量子漂移扩散(QDD)模型的最佳半导体设计问题。设计问题被公式化为PDE约束的最佳控制问题,其中掺杂分布充当控制变量。对于任意标度的普朗克常数,都存在极小值,因此可以研究相应的序列。使用伽玛收敛和等矫顽力的概念,我们可以证明极小值和极小值的收敛。由于状态系统缺乏唯一性和存在优化问题,因此有必要为QDD模型建立新的结果,以确保存在一系列收敛于孤立经典解的量子解。作为副产品,我们获得了有关量子欧姆势的正则化性质的新见解。最后,我们介绍了MESFET器件的数值优化,强调了我们的分析结果。

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